Selective Atomic Scale Processes

Selective processes with atomic and molecular resolution have been attracting considerable attention during the last few years due to their capability to reach sub-10 nm resolution in semiconductor fabrication and a great potential for 3D-patterning.

After the breakthrough of atomic layer deposition (ALD) of dielectrics about a decade ago and revival of interest towards atomic layer etching (ALE), the research efforts to a large extend shifted to area-selective (AS) ALD and material- topographically-selective ALE. The combination of atomically selective ALD and ALE processes not only provide high flexibility in 2D patterning in high-resolution semiconductor technology, but also allow formation of structures in 3D. Both AS-ALD and selective ALE are based on self-limiting process steps that allow extreme control of deposition or etching in a layer-by-layer fashion.

Sequential Infiltration Synthesis (SIS), alternatively called also Vapor Phase Infiltration (VPI) complements the above-mentioned layer-by-layer technologies by its ability to form 3D nanostructures by a bulk diffusion and selective chemical reactions of precursor with functional groups in polymers or block co-polymers (BCP). Highly selective reactions of precursors with e.g. carbonyl groups (C=O) in the polymer bulk allows integration of inorganic materials into the organic matrix, resulting in a hybrid material. A self-organized BCP film after the SIS will form 3D nanostructures.

The common feature of all those methods is the use of self-limiting reactions that can provide atomic-scale resolution in both vertical and horizontal directions: this property can also be complemented by selectivity in etching or deposition. Selectivity in deposition or etching may solve some of the processing challenges in the technology of nano-devices, e.g. alignment of nanometer-sized features. The high degree of control makes the selective atomic scale processes very attractive for future nano-fabrication methods.

We are soliciting both poster and oral contributions to the Selective Atomic Processes session to include the following topics:

• Fundamental mechanisms of selective atomic processes in 2D (layer-by-layer) and 3D (bulk)
• Applications of selective atomic processes
• Selective atomic processes in micro- and nanoelectronics
• Characterization of selective atomic processes
• Industrial applications and scale ups
• Other relevant topics

Selective Atomic Scale Processes TAC Chair: Ivan Maximov, Lund University, ivan.maximov@ftf.lth.se